PZN-PT Perovskite Nanoparticles Thin Layer Deposition on Nanostructured p-Type Silicon Substrate for an Inorganic - Perovskite Solar Cells ApplicationWednesday (28.09.2016) 11:45 - 12:00 Part of:
This work involves an investigation of nanostructures and microelectronic properties and domain engineering of nanoparticles thin layers of PZN-PT ferroelectric single crystals deposited on nanostructured silicon p and n-type substrates. Indeed, PZN-PT single crystals showed properties up to 10 times more interesting than those of the ferroelectric perovskite materials currently used. The aim of this study is twofold. On the one hand, it will be getting around, despite their excellent ferroelectric and piezoelectric properties and the difficulty of making these single crystals as a thin layer, using single crystal nanoparticles, already synthesized by conventional methods, by spin coating with a gel based on these perovskite single crystals. Studying their ferroelectric and piezoelectric properties would be able to integrate them easily in electronic devices such as sensor or transducer. On the other hand, a second innovative aspect relates to their use on substrates such as silicon for inorganic - inorganic hybrid perovskites solar cells knowing that, all studies are with organic – inorganic perovskites cells. This is the most original aspect of the work and requires an intensive study on their structural properties and the impact of the introduction of such perovskite nanoparticles in the nanostructured silicon substrate. By using them as active material in a silicon nanostructure, one could increase the electrical or optical properties of silicon based solar cells. However, one of the greatest difficulties in the use of such single crystals is to achieve them in thin layers form because of their incongruent melting property.
In this work, to integrate them into silicon nanostructures, we realized PZN-PT nanoparticles deposit, already synthesized by the so-called solution flow method . Synchrotron Radiation Beamline was used to characterize this device.
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