MSE 2016 - Full Program

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Lecture

Ultra high quality metallic thin films from air stable and volatile precursors via radical enhanced ALD – a simple way to base metal thin film fabrication

Tuesday (27.09.2016)
11:30 - 11:45
Part of:


The authors report about the RF remote hydrogen plasma assisted atomic layer deposition of ignoble metal (cobalt and nickel) as well as copper metal thin films. The brilliance of the processing is its simplicity, as the precursor preparation and handling do not need any special precautionary measures like inert atmospheres or special chemicals. The ligand concept enables volatile compounds with good thermal stability, showing clean evaporation and conformal coating of the substrate. Combined XRD and XPS analysis proofs that the as deposited films are crystalline after subsequent hydrogen plasma treatment, which is applied to the films immediately after the deposition as a succeeding recrystallization process. Resistivity measurements show good results for the thin film resistivity, which depends on the substrate’s surface roughness, as the metallic thin film faithfully follows the roughness of the substrate.

Speaker:
Alexander Sasinska
University of Cologne
Additional Authors:
  • Jennifer Leduc
    University of Cologne
  • Dr. Lisa Czympiel
    University of Cologne
  • Miroslav Soroka
    University of Cologne
  • Prof. Dr. Sanjay Mathur
    University of Cologne