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Understanding the internal interfaces in semiconductor materials and devices: a correlative microscopy approach.

Wednesday (28.09.2016)
16:00 - 16:15
Part of:

Nowadays, there is a high need to understand the relationship between structural and chemical properties for specific interfaces in semiconductor materials and devices. In these devices, interfaces between individual layers in a thin-film stack, such as p-n heterojunctions, or structural defects such as grain boundaries or stacking faults, often influence substantially the performance of the device [1]. Diffraction techniques in transmission electron microscopy (TEM) are excellent tools for structural investigations, i.e., the structure of stacking faults, the crystallographic orientation of grain boundary, and the crystallographic structure of unknown phases.

The present work shows an advanced, correlative study combining atom-probe tomography (APT) and TEM on various photovoltaic and thermoelectric materials. Indeed, different approaches for determining structural (and chemical) property relationships for a large variety of semiconductor materials and devices, ranging from Cu(In,Ga)Se2 solar-cell absorbers to AgSbTe2 thermoelectric materials will be presented. The experimental results to be presented will also be compared directly with the existing theoretical models on defects and phase formation in photovoltaic and thermoelectric materials.

[1] M. Müller et al., Journal of Applied Physics 115 (2014) 023514.

Dr. Oana Cojocaru-Mirédin
RWTH Aachen University
Additional Authors:
  • Lamya Abdellaoui
    Max-Planck Institut für Eisenforschng
  • Purvesh Soni
    RWTH Aachen University
  • Dr. Roland Mainz
    Helmholtz-Zentrum Berlin für Materialien und Energie
  • Dr. Andreas Weber
    Helmholtz-Zentrum Berlin für Materialien und Energie
  • Dr. Daniel Abou-Ras
    Helmholtz-Zentrum Berlin für Materialien und Energie


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